A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN
نویسندگان
چکیده
The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.
منابع مشابه
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structure
The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time [1]. The reduction of strain-related defects, the high polarization at the interface and high carrier mobility of the 2-dimensional electron gas (2DEG) make InAlGaN a viable way...
متن کاملDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملPerformance of InGaN/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers
The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slop...
متن کاملSuperior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
properties of AIGaN-channel HEMT fabricated on a free-standing A1N substrate, estimated at temperatures between 25 and 300°C. The AIGaNchannel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional A1GaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300...
متن کامل